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ON��ɭ�� FR014H5JZ WDFN-8 �o늺���ӿ���o(h��) 22+ �F(xi��n)؛
ST/�ⷨ LM317T ���Է�(w��n)���� ���bTO-220 ԭ�b�}(c��ng)��(k��)�F(xi��n)؛
ADI/�����Z AD421BRZ ��(sh��)ģ�D(zhu��n)�Q��-DAC ���bSOP16 ȫ��ԭ�b �r(ji��)��(y��u)��(sh��)
INFINEON/Ӣ�w�� TLE4268GSXUMA2 �͉��(w��n)���� ���bSOP8 �}(c��ng)��(k��)�F(xi��n)؛ �S�r(sh��)��؛
ADI/�����Z ADG408BRZ ��·��(f��)���_�P(gu��n)IC ���bSOP-16 ȫ��ԭ�b �r(ji��)��(y��u)��(sh��)
������: Infineon �a(ch��n)Ʒ�N�: MOSFET RoHS: Ԕ��(x��)��Ϣ ���g(sh��): Si ���b�L(f��ng)��: Through Hole ���b / ���w: TO-220FP-3 ���w�ܘO��: N-Channel ͨ����(sh��)��: 1 Channel Vds-©Դ�O����늉�: 800 V Id-�B�m(x��)©�O���: 11 A Rds On-©Դ��(d��o)ͨ���: 450 mOhms Vgs - �ŘO-Դ�O늉�: - 20 V, + 20 V Vgs th-��Դ�O�ֵ늉�: 2.1 V Qg-�ŘO늺�: 64 nC ��С�����ض�: - 55 C ������ض�: + 150 C Pd-���ʺ�ɢ: 34 W ͨ��ģʽ: Enhancement �̘�(bi��o)��: CoolMOS ϵ��: CoolMOS C3 ���b: Tube �̘�(bi��o): Infineon Technologies ����: Single �½��r(sh��)�g: 10 ns �߶�: 16.15 mm �L(zh��ng)��: 10.65 mm �a(ch��n)Ʒ���: MOSFET �����r(sh��)�g: 15 ns 500 ��e: MOSFETs ���w�����: 1 N-Channel �����P(gu��n)�]���t�r(sh��)�g: 72 ns ���ͽ�ͨ���t�r(sh��)�g: 25 ns ����: 4.85 mm ���̖(h��o)�e��: SP000216320 SPA11N8C3XK SPA11N80C3XKSA1 ��λ����: 2 g
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