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������:
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onsemi
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�a(ch��n)Ʒ�N�:
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IGBT ���w��
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���g(sh��):
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Si
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���b / ���w:
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TO-247-3
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���b�L(f��ng)��:
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Through Hole
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����:
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Single
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��늘O���l(f��)��O���늉� VCEO:
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650 V
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��늘O����O�늉�:
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1.6 V
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�ŘO/�l(f��)��O���늉�:
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- 20 V, 20 V
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��25 C���B�m(x��)��늘O���:
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80 A
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Pd-���ʺ�ɢ:
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238 W
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��С�����ض�:
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- 55 C
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������ض�:
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+ 175 C
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�Y��:
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AEC-Q101
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���b:
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Tube
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�̘�(bi��o):
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onsemi
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�a(ch��n)Ʒ���:
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IGBT Transistors
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���S���b��(sh��)��:
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30
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��e:
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IGBTs
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