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TP0101T
規(guī)格信息：

制造商:Vishay

產(chǎn)品種類:MOSFET

RoHS:否

Id-連續(xù)漏極電流:600 mA

Vds-漏源極擊穿電壓:- 20 V

Rds On-漏源導(dǎo)通電阻:650 mOhms

晶體管極性:P-Channel

Vgs-柵源極擊穿電壓 :8 V

最大工作溫度:+ 150 C

Pd-功率耗散:350 mW

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:SOT-23-3

商標(biāo):Vishay / Siliconix

通道模式:Enhancement

配置:Single

下降時(shí)間:25 ns

最小工作溫度:- 55 C

上升時(shí)間:25 ns

工廠包裝數(shù)量:1000

典型關(guān)閉延遲時(shí)間:19 ns

典型接通延遲時(shí)間:7 ns

TP0101T

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	相關(guān)型號(hào)	產(chǎn)品購(gòu)買
TP0101T	P-Channel 20-V (D-S) MOSFET, Low-Threshold	VISHAY[Vishay Siliconix]	35.99 Kbytes	共4頁(yè)	TP0205A,TP0101K,SI1901DL,SI4943DY,SI7911DN,AF4415P,SI1563DH,SI3495DV,SI5433DC,SI7705DN	產(chǎn)品購(gòu)買
TP0101T	TP0101K vs. TP0101T Specification Comparison	VISHAY[Vishay Siliconix]	90.95 Kbytes	共1頁(yè)	TN0200K,SI5402BDC,SI7840BDP,SI7868ADP,72893,SI6880AEDQ,SI7900,SI5404BDC,SI3850ADV,DMF5010NB-FW	產(chǎn)品購(gòu)買
TP0101TS	P-Channel 20-V (D-S) MOSFET, Low-Threshold	VISHAY[Vishay Siliconix]	35.99 Kbytes	共4頁(yè)	TP0205A,TP0101K,SI1901DL,SI4943DY,SI7911DN,AF4415P,SI1563DH,SI3495DV,SI5433DC,SI7705DN	產(chǎn)品購(gòu)買
TP0101TS-T1		VBsemi(臺(tái)灣微碧)	896.12 Kbytes	共9頁(yè)		產(chǎn)品購(gòu)買
TP0101TS-T1-E3	P-Channel 20-V (D-S) MOSFET	VBSEMI[VBsemi Electronics Co.,Ltd]	1038.21 Kbytes	共9頁(yè)		產(chǎn)品購(gòu)買