������:STMicroelectronics
�a(ch��n)Ʒ�N�:MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:Through Hole
���b / ���w:TO-220FP-3
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:1.05 kV
Id-�B�m(x��)©�O���:6 A
Rds On-©Դ��(d��o)ͨ���:1 Ohms
Vgs th-��Դ�O�ֵ늉�:3 V
Vgs - �ŘO-Դ�O늉�:30 V
Qg-�ŘO늺�:21.5 nC
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:30 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:MDmesh
���b:Tube
ϵ��:STF10N105K5
�̘�(bi��o):STMicroelectronics
�½��r(sh��)�g:21.5 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:8 ns
���S���b��(sh��)��:1000
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:50 ns
���ͽ�ͨ���t�r(sh��)�g:19 ns
�����:2.300 g