| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關型號 | 第一頁預覽 | 產(chǎn)品購買 |
| SI7430DP | N-Channel 150-V (D-S) WFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/177VISHAY.GIF) | 114.9 Kbytes | 共7頁 |  | SUP40N10-35,SI9410DY,SUP75N06-08,SI2312DS_05,SI7108DN,SI9956DY,SI7842DP,SI1970DH,SIE812DF,SI4946EY |
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| SI7430DP | N-Channel 150-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/177VISHAY.GIF) | 198.43 Kbytes | 共4頁 |  | |
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| SI7430DP | N-Channel 150 V (D-S) MOSFET | VAISH[Vaishali Semiconductor] | ![VAISH[Vaishali Semiconductor]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/174VAISH.GIF) | 170.33 Kbytes | 共9頁 |  | |
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| SI7430DP_07 | N-Channel 150-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/177VISHAY.GIF) | 198.43 Kbytes | 共4頁 |  | |
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| SI7430DP_13 | N-Channel 150 V (D-S) MOSFET | VAISH[Vaishali Semiconductor] | ![VAISH[Vaishali Semiconductor]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/174VAISH.GIF) | 170.33 Kbytes | 共9頁 |  | |
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產(chǎn)品購買
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| SI7430DP-T1-E3 | MOSFET 150V Vds 20V Vgs PowerPAK SO-8 | Vishay / Siliconix |  | 319.48 Kbytes | 共13頁 |  | |
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產(chǎn)品購買
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| SI7430DP-T1-E3 | MOSFET N-CH 150V 26A PPAK SO-8 | Vishay Siliconix |  | 316.50 Kbytes | 共13頁 |  | |
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產(chǎn)品購買
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| SI7430DP-T1-E3 | 連續(xù)漏極電流(Id)(25°C 時):26A 漏源電壓(Vdss):150V 柵源極閾值電壓:4.5V @ 250uA 漏源導通電阻:45mΩ @ 5A,10V 最大功率耗散(Ta=25°C):5.2W 類型:N溝道 | VISHAY(威世) |  | 318.18 Kbytes | 共13頁 |  | |
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| SI7430DP-T1-GE3 | MOSFET 150V Vds 20V Vgs PowerPAK SO-8 | Vishay / Siliconix |  | 319.48 Kbytes | 共13頁 |  | |
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產(chǎn)品購買
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| SI7430DP-T1-GE3 | MOSFET N-CH 150V 26A PPAK SO-8 | Vishay Siliconix |  | 316.50 Kbytes | 共13頁 |  | |
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產(chǎn)品購買
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| SI7430DP-T1-GE3 | 連續(xù)漏極電流(Id)(25°C 時):26A 漏源電壓(Vdss):150V 柵源極閾值電壓:4.5V @ 250uA 漏源導通電阻:45mΩ @ 5A,10V 最大功率耗散(Ta=25°C):5.2W 類型:N溝道 | VISHAY(威世) |  | 318.18 Kbytes | 共13頁 |  | |
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產(chǎn)品購買
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