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SeriesHEXFET?

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)40 V

Current - Continuous Drain (Id) @ 25°C185A (Tc)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Rds On (Max) @ Id, Vgs4.5mOhm @ 110A, 10V

Vgs(th) (Max) @ Id1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs140 nC @ 4.5 V

Vgs (Max)±16V

Input Capacitance (Ciss) (Max) @ Vds7660 pF @ 25 V

FET Feature-

Power Dissipation (Max)300W (Tc)

Operating Temperature-

Mounting TypeSurface Mount

Supplier Device PackageSUPER D2-PAK

Package / CaseSuper D2-Pak