FET 類型:N 溝道
技術(shù):MOSFET(金屬氧化物)
漏源電壓(Vdss):100V
電流 - 連續(xù)漏極(Id)(25°C 時(shí)):15A(Tc)
驅(qū)動(dòng)電壓(最大 Rds On,最小 Rds On):4V,5V
不同 Id 時(shí)的 Vgs(th)(最大值):2V @ 250μA
不同 Vgs 時(shí)的柵極電荷?(Qg)(最大值):28nC @ 5V
Vgs(最大值):±10V
不同 Vds 時(shí)的輸入電容(Ciss)(最大值):930pF @ 25V
功率耗散(最大值):88W(Tc)
不同?Id,Vgs 時(shí)的?Rds On(最大值):160 毫歐 @ 9A,5V
工作溫度:-55°C ~ 175°C(TJ)
安裝類型:通孔
供應(yīng)商器件封裝:TO-220AB
封裝/外殼:TO-220-3
無鉛情況/RoHs:無鉛/符合RoHs
IRL530
| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
|---|---|---|---|---|---|---|---|---|---|
| IRL530 | HEXFET Power MOSFET | IRF[International Rectifier] | 193.79 Kbytes | 共8頁 | IRF7341,IRLR2905,IRLMS1902,IRLL024N,IRL2910,IRF8910,IRFU330,IRL3402,IRLR3802,IRFI5210 | 產(chǎn)品購買 | |||
| IRL530 | Power MOSFET | VISHAY[Vishay Siliconix] | 1148.6 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| IRL530 | Advanced Power MOSFET | FAIRCHILD[Fairchild Semiconductor] | 233.97 Kbytes | 共7頁 | IRF540A,IRFS530A,IRLM120A,IRLWI530A,SFM9014,SFP9644,SFS2955,SFW12955,SSF17N60A,STK830FC | 產(chǎn)品購買 | |||
| IRL530_17 | Power MOSFET | VISHAY[Vishay Siliconix] | 1148.6 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| IRL530A | Advanced Power MOSFET | FAIRCHILD[Fairchild Semiconductor] | 233.97 Kbytes | 共7頁 | IRF540A,IRFS530A,IRLM120A,IRLWI530A,SFM9014,SFP9644,SFS2955,SFW12955,SSF17N60A,STK830FC | 產(chǎn)品購買 | |||
| IRL530L | MOSFET N-CH 100V 15A TO-262 | Vishay Siliconix | 167.26 Kbytes | 共6頁 | 產(chǎn)品購買 | ||||
| IRL530N | HEXFET Power MOSFET | IRF[International Rectifier] | 193.79 Kbytes | 共8頁 | IRF7341,IRLR2905,IRLMS1902,IRLL024N,IRL2910,IRF8910,IRFU330,IRL3402,IRLR3802,IRFI5210 | 產(chǎn)品購買 | |||
| IRL530N | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | 338.12 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| IRL530NL | Isc N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | 300.2 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| IRL530NLPBF | Adavanced Process Technology | IRF[International Rectifier] | 466.05 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NLPBF | HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.10?? , ID=17A ) | IRF[International Rectifier] | 465.09 Kbytes | 共11頁 | IRLI530GPBF,IRFZ34VPBF,IRF7210PBF,IRFR210PBF,IRFR3707ZCPBF,IRF5210SPBF,IRF7460PBF,IRFBC40APBF,IRFP340PBF,IRFS4410PBF | 產(chǎn)品購買 | |||
| IRL530NPBF | Adavanced Process Technology | IRF[International Rectifier] | 466.05 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NPBF | ADVANCED PROCESS TECHNOLOGY | IRF[International Rectifier] | 587.26 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| IRL530NPBF_15 | ADVANCED PROCESS TECHNOLOGY | IRF[International Rectifier] | 587.26 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| IRL530NS | Isc N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | 189.18 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| IRL530NS | HEXFET Power MOSFET | IRF[International Rectifier] | 281.15 Kbytes | 共10頁 | IRF7341,IRLR2905,IRF7494,IRL3303,IRL2703S,IRF8910,IRFU330,IRL3402,IRLR3802,IRFI5210 | 產(chǎn)品購買 | |||
| IRL530NSL | l Advanced Process Technology | IRF[International Rectifier] | 290.4 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NSPBF | ADVANCED PROCESS TECHNOLOGY | IRF[International Rectifier] | 466.05 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NSPBF | Adavanced Process Technology | IRF[International Rectifier] | 466.05 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NSPBF | HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.10?? , ID=17A ) | IRF[International Rectifier] | 465.09 Kbytes | 共11頁 | IRLI530GPBF,IRFZ34VPBF,IRF7210PBF,IRFR210PBF,IRFR3707ZCPBF,IRF5210SPBF,IRF7460PBF,IRFBC40APBF,IRFP340PBF,IRFS4410PBF | 產(chǎn)品購買 | |||
| IRL530NSPBF_15 | ADVANCED PROCESS TECHNOLOGY | IRF[International Rectifier] | 466.05 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NSTRL | MOSFET N-CH 100V 17A D2PAK | Infineon Technologies | 466.85 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| IRL530NSTRLPBF | MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Infineon / IR | 461.85 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NSTRLPBF | MOSFET N-CH 100V 17A D2PAK | Infineon Technologies | 466.85 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| IRL530NSTRLPBF | 連續(xù)漏極電流(Id)(25°C 時(shí)):17A 漏源電壓(Vdss):100V 柵源極閾值電壓:2V @ 250uA 漏源導(dǎo)通電阻:100mΩ @ 9A,10V 最大功率耗散(Ta=25°C):3.8W 類型:N溝道 | Infineon(英飛凌) | 460.47 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NSTRR | MOSFET N-CH 100V 17A D2PAK | Infineon Technologies | 466.85 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| IRL530NSTRRPBF | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 100mOhms | Infineon / IR | 461.85 Kbytes | 共11頁 | 產(chǎn)品購買 | ||||
| IRL530NSTRRPBF | MOSFET N-CH 100V 17A D2PAK | Infineon Technologies | 466.85 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| IRL530NSTRRPBF | Infineon(英飛凌) | 460.47 Kbytes | 共11頁 | 產(chǎn)品購買 | |||||
| IRL530PBF | HEXFET?? Power MOSFET | IRF[International Rectifier] | 250.43 Kbytes | 共8頁 | IRFBA1405PPBF,IRFPG30PBF,IR710PBF,IRLL014,IRFBC40SPBF,IRFR9120PBF,IRFBC30APBF,IRF7F3704,IRFI614GPBF,IRFZ44EPBF | 產(chǎn)品購買 |
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