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IRF3707 PDF文件_規(guī)格信息

IRF3707
規(guī)格信息：

產(chǎn)品培訓(xùn)模塊：Discrete Power MOSFETs 40V and Below

標(biāo)準(zhǔn)包裝：50

類別：分立半導(dǎo)體產(chǎn)品

家庭：FET - 單

系列：HEXFET®

包裝：管件

FET 類型：MOSFET N 通道，金屬氧化物

FET 功能：邏輯電平門

漏源極電壓（Vdss）：30V

電流 - 連續(xù)漏極（Id）（25°C 時）：62A（Tc）

不同?Id，Vgs 時的?Rds On（最大值）：12.5 毫歐 @ 15A，10V

不同 Id 時的 Vgs（th）（最大值）：3V @ 250µA

不同 Vgs 時的柵極電荷（Qg）：19nC @ 4.5V

不同 Vds 時的輸入電容（Ciss）：1990pF @ 15V

功率 - 最大值：87W

安裝類型：通孔

封裝/外殼：TO-220-3

供應(yīng)商器件封裝：TO-220AB

其它名稱：*IRF3707

IRF3707

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