制造商:Infineon
產(chǎn)品種類:IGBT 晶體管
RoHS:是
技術(shù):Si
封裝 / 箱體:TO-247-3
安裝風(fēng)格:Through Hole
配置:Single
集電極—發(fā)射極最大電壓 VCEO:600 V
集電極—射極飽和電壓:1.5 V
柵極/發(fā)射極最大電壓:20 V
在25 C的連續(xù)集電極電流:60 A
Pd-功率耗散:187 W
最小工作溫度:- 40 C
最大工作溫度:+ 175 C
系列:TRENCHSTOP IGBT
封裝:Tube
集電極最大連續(xù)電流 Ic:60 A
高度:20.9 mm
長度:15.9 mm
寬度:5.03 mm
商標(biāo):Infineon Technologies
柵極—射極漏泄電流:100 nA
產(chǎn)品類型:IGBT Transistors
工廠包裝數(shù)量:240
子類別:IGBTs
商標(biāo)名:TRENCHSTOP
零件號別名:IGW30N60TFKSA1 IGW3N6TXK SP000054925
單位重量:38 g
IGW30N60T
| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
|---|---|---|---|---|---|---|---|---|---|
| IGW30N60T | Low Loss IGBT in TrenchStop and Fieldstop technology | INFINEON[Infineon Technologies AG] | 446.85 Kbytes | 共13頁 | 產(chǎn)品購買 | ||||
| IGW30N60T | Low Loss IGBT : IGBT in TRENCHSTOPa?¢ and Fieldstop technology | INFINEON[Infineon Technologies AG] | 495.77 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| IGW30N60T_15 | Low Loss IGBT : IGBT in TRENCHSTOPa?¢ and Fieldstop technology | INFINEON[Infineon Technologies AG] | 495.77 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| IGW30N60TFKSA1 | IGBT 600V 60A 187W TO247-3 | Infineon Technologies | 461.21 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| IGW30N60TP | TRENCHSTOPTM Performance technology | INFINEON[Infineon Technologies AG] | 1464.99 Kbytes | 共14頁 | 產(chǎn)品購買 | ||||
| IGW30N60TPXKSA1 | IGBT 晶體管 The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. | Infineon Technologies | 1.44 Mbytes | 共14頁 | 產(chǎn)品購買 | ||||
| IGW30N60TPXKSA1 | IGBT TRENCH/FS 600V 53A TO247-3 | Infineon Technologies | 1.43 Mbytes | 共14頁 | 產(chǎn)品購買 |
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