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FQD6N50C
規(guī)格信息：

制造商:Fairchild Semiconductor

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:4.5 A

Vds-漏源極擊穿電壓:500 V

Rds On-漏源導(dǎo)通電阻:1.2 Ohms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :30 V

最大工作溫度:+ 150 C

Pd-功率耗散:2.5 W

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:DPAK-3

商標(biāo):Fairchild Semiconductor

通道模式:Enhancement

配置:Single

下降時(shí)間:45 ns

最小工作溫度:- 55 C

上升時(shí)間:35 ns

系列:FQD6N50

典型關(guān)閉延遲時(shí)間:55 ns

典型接通延遲時(shí)間:10 ns

FQD6N50C

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	相關(guān)型號(hào)	產(chǎn)品購(gòu)買(mǎi)
FQD6N50C	These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology	FAIRCHILD[Fairchild Semiconductor]	687.06 Kbytes	共9頁(yè)	RFH35N08,FDS9934C,RFK35N08,MTE50N45,MRF21030R3,MTP1N60,RFM6P08,BUK7520-55A,MRF18030BR3,RFM5P12	產(chǎn)品購(gòu)買(mǎi)
FQD6N50C_08	500V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	762.59 Kbytes	共9頁(yè)		產(chǎn)品購(gòu)買(mǎi)
FQD6N50CTF	MOSFET N-CH 500V 4.5A DPAK	ON Semiconductor	652.37 Kbytes	共10頁(yè)		產(chǎn)品購(gòu)買(mǎi)
FQD6N50CTM	N-Channel QFET MOSFET 500 V, 4.5 A, 1.2	FAIRCHILD[Fairchild Semiconductor]	547.29 Kbytes	共8頁(yè)		產(chǎn)品購(gòu)買(mǎi)
FQD6N50CTM_F080	MOSFET N-CH 500V 4.5A DPAK	ON Semiconductor	652.37 Kbytes	共10頁(yè)		產(chǎn)品購(gòu)買(mǎi)