制造商:Diodes Incorporated
產(chǎn)品種類:MOSFET
Id-連續(xù)漏極電流:- 6.6 A
Vds-漏源極擊穿電壓:- 12 V
Rds On-漏源導(dǎo)通電阻:25 mOhms
晶體管極性:P-Channel
Vgs-柵源極擊穿電壓 :8 V
Qg-柵極電荷:16.1 nC
Pd-功率耗散:613 mW
安裝風(fēng)格:SMD/SMT
封裝 / 箱體:DFN-1616-6
商標(biāo):Diodes Incorporated
正向跨導(dǎo) - 最小值:3 S, 0.4 S
系列:DMP1245