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BSP320S PDF文件_規(guī)格信息

BSP320S
規(guī)格信息：

制造商:Infineon

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:2.9 A

Vds-漏源極擊穿電壓:60 V

Rds On-漏源導(dǎo)通電阻:120 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :20 V

最大工作溫度:+ 150 C

Pd-功率耗散:1.8 W

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:SOT-223-3

商標(biāo):Infineon Technologies

通道模式:Enhancement

配置:Single Dual Drain

下降時(shí)間:25 ns

最小工作溫度:- 55 C

上升時(shí)間:25 ns

典型關(guān)閉延遲時(shí)間:25 ns

典型接通延遲時(shí)間:11 ns

BSP320S

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號(hào)	產(chǎn)品購買
BSP320S	SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)	SIEMENS[Siemens Semiconductor Group]	130.49 Kbytes	共8頁	BSP17,BSP170,BSP171,BSP298,BSP299,BSP300,BSP319,BSP372,BSP373,BUZ171	產(chǎn)品購買
BSP320S	SIPMOS Small-Signal-Transistor	INFINEON[Infineon Technologies AG]	79.62 Kbytes	共8頁	BSP135,BSS7728N,BSO-302SN,BSP149,SN7002N,BSP170P,BSP613P,SN7002W,BSP171P,BSS83P	產(chǎn)品購買
BSP320S	SIPMOS Small-Signal-Transistor	INFINEON[Infineon Technologies AG]	460.75 Kbytes	共9頁		產(chǎn)品購買
BSP320S E6327	MOSFET N-CH 60V 2.9A SOT-223	Infineon Technologies	496.38 Kbytes	共9頁		產(chǎn)品購買
BSP320S E6327	MOSFET N-CH 60V 2.9A SOT223-4	Infineon Technologies	496.38 Kbytes	共9頁		產(chǎn)品購買
BSP320S E6433	MOSFET N-CH 60V 2.9A SOT-223	Infineon Technologies	496.38 Kbytes	共9頁		產(chǎn)品購買
BSP320S E6433	MOSFET N-CH 60V 2.9A SOT223-4	Infineon Technologies	496.38 Kbytes	共9頁		產(chǎn)品購買
BSP320S H6327	MOSFET N-Ch 60V 2.9A SOT-223-3	Infineon Technologies	486.7 Kbytes	共9頁		產(chǎn)品購買
BSP320S H6327		Infineon(英飛凌)	485.50 Kbytes	共9頁		產(chǎn)品購買
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BSP320SH6327XTSA1	MOSFET N-CH 60V 2.9A SOT223	Infineon Technologies	496.38 Kbytes	共9頁		產(chǎn)品購買
BSP320SH6327XTSA1	連續(xù)漏極電流（Id）（25°C 時(shí)）：2.9A(Tj) 漏源電壓（Vdss）：60V 柵源極閾值電壓：4V @ 20uA 漏源導(dǎo)通電阻：120mΩ @ 2.9A,10V 最大功率耗散（Ta=25°C）：1.8W 類型：N溝道	Infineon(英飛凌)	485.50 Kbytes	共9頁		產(chǎn)品購買
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