������:ON Semiconductor
�a(ch��n)Ʒ�N�:�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���b�L��:Through Hole
���b / ���w:TO-225-3
���w�ܘO��:PNP
����:Single
��늘O���l(f��)��O���늉� VCEO:80 V
��늘O�����O늉� VCBO:80 V
�l(f��)��O - ���O늉� VEBO:5 V
��늘O����O�늉�:0.8 V
���ֱ��늼�늘O���:4 A
���控���a(ch��n)ƷfT:3 MHz
��С�����ض�:- 55 C
������ض�:+ 150 C
ϵ��:BD442
�߶�:11.04 mm (Max)
�L��:7.74 mm (Max)
���b:Bulk
����:2.66 mm (Max)
�̘�:ON Semiconductor
��늘O�B�m(x��)���:4 A
ֱ����늘O/Base Gain hfe Min:15
Pd-���ʺ�ɢ:36 W
�a(ch��n)Ʒ���:BJTs - Bipolar Transistors
���S���b��(sh��)��:500
��e:Transistors
�����:2 g