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2N3789 PDF文件_規(guī)格信息

2N3789
規(guī)格信息：

制造商:Central Semiconductor

產(chǎn)品種類:雙極晶體管 - 雙極結(jié)型晶體管(BJT)

RoHS:是

安裝風(fēng)格:Through Hole

封裝 / 箱體:TO-3-2

晶體管極性:PNP

集電極—發(fā)射極最大電壓 VCEO:60 V

集電極—基極電壓 VCBO:60 V

發(fā)射極 - 基極電壓 VEBO:7 V

集電極—射極飽和電壓:1 V

最大直流電集電極電流:10 A

增益帶寬產(chǎn)品fT:4 MHz

最小工作溫度:- 65 C

最大工作溫度:+ 150 C

系列:2N3789

封裝:Tube

商標(biāo):Central Semiconductor

集電極連續(xù)電流:10 A

直流集電極/Base Gain hfe Min:25

Pd-功率耗散:150 W

產(chǎn)品類型:BJTs - Bipolar Transistors

工廠包裝數(shù)量:20

子類別:Transistors

零件號別名:2N3789 PBFREE

單位重量:6.401 g

2N3789

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
2N3789	SILICON PNP POWER TRANSISTORS	CENTRAL[Central Semiconductor Corp]	494.36 Kbytes	共2頁		產(chǎn)品購買
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