������:ON Semiconductor
�a(ch��n)Ʒ�N�:�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���b�L(f��ng)��:SMD/SMT
���b / ���w:SOT-23-3
���w�ܘO��:NPN
����:Single
��늘O���l(f��)��O���늉� VCEO:12 V
��늘O�����O늉� VCBO:20 V
��늘O����O�늉�:400 mV
���ֱ��늼�늘O���:0.1 A
���控���a(ch��n)ƷfT:400 MHz
��С�����ض�:- 55 C
������ض�:+ 150 C
ϵ��:BSV52L
�߶�:0.94 mm
�L(zh��ng)��:2.9 mm
���b:Cut Tape
���b:MouseReel
���b:Reel
����:1.3 mm
�̘�(bi��o):ON Semiconductor
��늘O�B�m(x��)���:0.1 A
ֱ����늘O/Base Gain hfe Min:25
Pd-���ʺ�ɢ:225 W
�a(ch��n)Ʒ���:BJTs - Bipolar Transistors
���S���b��(sh��)��:3000
��e:Transistors
�����:8 mg