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RoHS:��
���g(sh��):Si
���b�L(f��ng)��:Through Hole
���b / ���w:TO-220FP-3
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���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:250 V
Id-�B�m(x��)©�O���:15.6 A
Rds On-©Դ��(d��o)ͨ���:270 mOhms
Vgs - �ŘO-Դ�O늉�:30 V
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:43 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:QFET
���b:Tube
�߶�:16.07 mm
�L(zh��ng)��:10.36 mm
ϵ��:FQPF16N25C
���w�����:1 N-Channel
���:MOSFET
����:4.9 mm
�̘�(bi��o):ON Semiconductor / Fairchild
����猧(d��o) - ��Сֵ:10.5 S
�½��r(sh��)�g:105 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:130 ns
���S���b��(sh��)��:1000
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:135 ns
���ͽ�ͨ���t�r(sh��)�g:15 ns
���̖(h��o)�e��:FQPF16N25C_NL
�����:2.270 g