������:Diodes Incorporated
�a(ch��n)Ʒ�N�:�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���b�L(f��ng)��:SMD/SMT
���b / ���w:DPAK-3
���w�ܘO��:NPN
����:Single
��늘O���l(f��)��O���늉� VCEO:45 V
��늘O�����O늉� VCBO:60 V
�l(f��)��O - ���O늉� VEBO:5 V
��늘O����O�늉�:240 mV
���ֱ��늼�늘O���:3 A
���控���a(ch��n)ƷfT:150 MHz
��С�����ض�:- 55 C
������ض�:+ 150 C
ϵ��:ZXT690
ֱ��������� hFE ���ֵ:500 at 100 mA, 2 V
�߶�:2.39 mm
�L��:6.73 mm
���b:Cut Tape
���b:MouseReel
���b:Reel
����:6.22 mm
�̘�(bi��o):Diodes Incorporated
��늘O�B�m(x��)���:3 A
ֱ����늘O/Base Gain hfe Min:500 at 100 mA, 2 V, 400 at 1 A, 2 V, 150 at 2 A, 2 V, 60 at 3 A, 2 V
Pd-���ʺ�ɢ:3900 mW
�a(ch��n)Ʒ���:BJTs - Bipolar Transistors
���S���b��(sh��)��:2500
��e:Transistors
�����:260.400 mg