制造商:Microchip
產(chǎn)品種類:MOSFET
RoHS:否
商標(biāo):Microchip Technology
Id-連續(xù)漏極電流:250 mA
Vds-漏源極擊穿電壓:200 V
Rds On-漏源導(dǎo)通電阻:6 Ohms
晶體管極性:N-Channel
Vgs-柵源極擊穿電壓 :20 V
最大工作溫度:+ 150 C
Pd-功率耗散:1 W
安裝風(fēng)格:Through Hole
封裝 / 箱體:TO-92-3
通道模式:Enhancement
配置:Single
下降時(shí)間:20 ns
最小工作溫度:- 55 C
上升時(shí)間:8 ns
工廠包裝數(shù)量:1000
典型關(guān)閉延遲時(shí)間:20 ns
典型接通延遲時(shí)間:10 ns
單位重量:220 mg
TN0620N3
| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買 |
|---|---|---|---|---|---|---|---|---|---|
| TN0620N3 | N-Channel Enhancement-Mode Vertical DMOS FETs | SUTEX[Supertex, Inc] | 27.71 Kbytes | 共4頁(yè) | TN0702,VN0204N6,TN1506,TN2106,VN1550,TN2124,VN2106,VN0650,TN2130,VN0300 | 產(chǎn)品購(gòu)買 | |||
| TN0620N3-G | N-Channel Enhancement-Mode Vertical DMOS FET | SUTEX[Supertex, Inc] | 458.44 Kbytes | 共5頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| TN0620N3-G P005 | MOSFET N-CH Enhancmnt Mode MOSFET | Microchip Technology | 451.96 Kbytes | 共5頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| TN0620N3-G-P002 | MOSFET N-CH Enhancmnt Mode MOSFET | Microchip Technology | 451.96 Kbytes | 共5頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| TN0620N3-G-P002 | MOSFET N-CH 200V 0.25A TO92-3 | Microchip Technology | 305.85 Kbytes | 共14頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| TN0620N3-G-P002 | MOSFET; N-CHANNEL ENHANCEMENT-MODE; 200V; 6.0 Ohm3 TO-92RVT/R | Microchip Technology Inc. | 305.85 Kbytes | 共14頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| TN0620N3-G-P014 | MOSFET N-CH Enhancmnt Mode MOSFET | Microchip Technology | 451.96 Kbytes | 共5頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| TN0620N3-G-P014 | MOSFET N-CH 200V 0.25A TO92-3 | Microchip Technology | 305.85 Kbytes | 共14頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| TN0620N3-G-P014 | MOSFET; N-CHANNEL ENHANCEMENT-MODE; 200V; 6.0 Ohm3 TO-92AMMO | Microchip Technology Inc. | 305.85 Kbytes | 共14頁(yè) | 產(chǎn)品購(gòu)買 |
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