安裝風(fēng)格:ThroughHole
封裝/外殼:TO-220-3
通道數(shù)量:1Channel
晶體管極性:N-Channel
Vds-漏源極擊穿電壓:600V
Id-連續(xù)漏極電流:13.4A
Rds On-漏源導(dǎo)通電阻:330mOhms
Vgs - 柵極-源極電壓:20V
最小工作溫度:-55C
最大工作溫度:+150C
配置:Single
Pd-功率耗散:156W
通道模式:Enhancement
高度:15.65mm
長(zhǎng)度:10mm
系列:CoolMOSCFD
晶體管類型:1N-Channel
寬度:4.4mm
下降時(shí)間:5ns
上升時(shí)間:24ns
典型關(guān)閉延遲時(shí)間:47ns
典型接通延遲時(shí)間:43ns
RDS (on) max:330.0m?
IDpuls max:33.0A
VDS max:600.0V
ID max:13.4A
Package:TO-220
Rth:0.8K/W
QG:63.0nC
Budgetary Price ?€/1k:1.49
Operating Temperature min:-55.0°C
Ptot max:156.0W
Polarity:N
RthJA max:62.0K/W
VGS(th) min max:3.0V 5.0V
無鉛情況/RoHs:無鉛/符合RoHs
SPP15N60CFD
| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁預(yù)覽 | 產(chǎn)品購買 |
|---|---|---|---|---|---|---|---|---|---|
| SPP15N60CFD | CoolMOS Power Transistor | INFINEON[Infineon Technologies AG] | 543.38 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| SPP15N60CFD | CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode | INFINEON[Infineon Technologies AG] | 340.34 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| SPP15N60CFD | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | 339.19 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| SPP15N60CFD_09 | CoolMOS Power Transistor | INFINEON[Infineon Technologies AG] | 543.38 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| SPP15N60CFDHKSA1 | MOSFET N-CH 650V 13.4A TO-220 | Infineon Technologies | 537.75 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| SPP15N60CFDHKSA1 | MOSFET N-CH 650V 13.4A TO220-3 | Infineon Technologies | 537.75 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| SPP15N60CFDXKSA1 | MOSFET N-Ch 650V 13.4A TO220-3 | Infineon Technologies | 536.38 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| SPP15N60CFDXKSA1 | LOW POWER_LEGACY | Infineon Technologies | 537.75 Kbytes | 共12頁 | 產(chǎn)品購買 | ||||
| SPP15N60CFDXKSA1 | LOW POWER_LEGACY | Infineon Technologies | 537.75 Kbytes | 共12頁 | 產(chǎn)品購買 |
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