商品類型MOS(場效應(yīng)管)
漏源電壓(Vdss)30V
連續(xù)漏極電流(Id)(25°C 時)3.5A
柵源極閾值電壓2.5V @ 250uA
漏源導(dǎo)通電阻47mΩ @ 3.5A,10V
最大功率耗散(Ta=25°C)350mW
類型N溝道
SI2306
| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
|---|---|---|---|---|---|---|---|---|---|
| SI2306 | SOT-23 Plastic-Encapsulate MOSFETS | MAKOSEMI[MAKO SEMICONDUCTOR CO.,LIMITED] | 395.11 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| SI2306 | SOT-23 Plastic-Encapsulate MOSFETS | ETC2[List of Unclassifed Manufacturers] | 201.59 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| SI2306 | N- CHANNEL MOSFET in a SOT-23 Plastic Package | FOSHAN[Foshan Blue Rocket Electronics Co.,Ltd.] | 473.71 Kbytes | 共6頁 | 產(chǎn)品購買 | ||||
| SI2306 | N-Channel Enhancement Mode Field Effect Transistor | MCC[Micro Commercial Components] | 283.27 Kbytes | 共3頁 | 產(chǎn)品購買 | ||||
| SI2306A | 連續(xù)漏極電流(Id)(25°C 時):3.5A 漏源電壓(Vdss):30V 柵源極閾值電壓:3V @ 250uA 漏源導(dǎo)通電阻:57mΩ @ 3.5A,10V 最大功率耗散(Ta=25°C):1.25W 類型:N溝道 | UMW(友臺半導(dǎo)體) | ![]() | 1.62 Mbytes | 共4頁 | 產(chǎn)品購買 | |||
| SI2306BDS | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 112.67 Kbytes | 共5頁 | SI3424DV,SI4396DY,SI1304BDL,SI9936BDY_07,SI4618DY,SI1302DL_08,SI1304BDL_08,SI4914DY,SUP75N03-04,SI1426DH_08 | 產(chǎn)品購買 | |||
| SI2306BDS | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 217.43 Kbytes | 共8頁 | 產(chǎn)品購買 | ||||
| SI2306BDS_17 | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 217.43 Kbytes | 共8頁 | 產(chǎn)品購買 | ||||
| SI2306BDS-T1-E3 | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 112.67 Kbytes | 共5頁 | SI3424DV,SI4396DY,SI1304BDL,SI9936BDY_07,SI4618DY,SI1302DL_08,SI1304BDL_08,SI4914DY,SUP75N03-04,SI1426DH_08 | 產(chǎn)品購買 | |||
| SI2306BDS-T1-GE3 | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 112.67 Kbytes | 共5頁 | SI3424DV,SI4396DY,SI1304BDL,SI9936BDY_07,SI4618DY,SI1302DL_08,SI1304BDL_08,SI4914DY,SUP75N03-04,SI1426DH_08 | 產(chǎn)品購買 | |||
| SI2306DS | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 57.93 Kbytes | 共4頁 | SI4830DY,SI7356DP,SUB75N03-07,SI5402BDC,SI7804DN,SUD50N03-09P,SI7894ADP,SI4894BDY,SI6954DQ,SUP70N03-09P | 產(chǎn)品購買 | |||
| SI2306DS | TrenchFET Power MOSFET 100% Rg | TYSEMI[TY Semiconductor Co., Ltd] | 142.13 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| SI2306DS | N-Channel 30-V (D-S) MOSFET | KEXIN[Guangdong Kexin Industrial Co.,Ltd] | 1431.93 Kbytes | 共4頁 | 產(chǎn)品購買 | ||||
| SI2306DS-HF | N-Channel MOSFET | KEXIN[Guangdong Kexin Industrial Co.,Ltd] | 1524.66 Kbytes | 共4頁 | 產(chǎn)品購買 | ||||
| SI2306DS-HF-3 | N-Channel MOSFET | KEXIN[Guangdong Kexin Industrial Co.,Ltd] | 1562.06 Kbytes | 共4頁 | 產(chǎn)品購買 | ||||
| SI2306DS-T1 | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 57.93 Kbytes | 共4頁 | SI4830DY,SI7356DP,SUB75N03-07,SI5402BDC,SI7804DN,SUD50N03-09P,SI7894ADP,SI4894BDY,SI6954DQ,SUP70N03-09P | 產(chǎn)品購買 | |||
| SI2306DS-T1-GE3 | N-Channel 30-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | 1025.46 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2306-TP | MOSFET N-Channel MOSFET, SOT-23 package | Micro Commercial Components (MCC) | 311.47 Kbytes | 共3頁 | 產(chǎn)品購買 | ||||
| SI2306-TP | N-CHANNEL MOSFET, SOT-23 PACKAGE | Micro Commercial Co | 1.13 Mbytes | 共4頁 | 產(chǎn)品購買 |
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