制造商:Micro Commercial Components (MCC)
產(chǎn)品種類:MOSFET
RoHS:是
技術(shù):Si
安裝風格:SMD/SMT
封裝 / 箱體:SOT-23-3
通道數(shù)量:1 Channel
晶體管極性:P-Channel
Vds-漏源極擊穿電壓:20 V
Id-連續(xù)漏極電流:2.8 A
Rds On-漏源導通電阻:120 mOhms
Vgs - 柵極-源極電壓:8 V
最小工作溫度:- 55 C
最大工作溫度:+ 150 C
Pd-功率耗散:1.25 W
配置:Single
通道模式:Enhancement
封裝:Reel
產(chǎn)品:MOSFET Small Signal
系列:P-Channel Polarity
晶體管類型:1 P-Channel
商標:Micro Commercial Components (MCC)
下降時間:5 ns
產(chǎn)品類型:MOSFET
上升時間:5 ns
工廠包裝數(shù)量:3000
子類別:MOSFETs
典型關(guān)閉延遲時間:52 ns
典型接通延遲時間:11 ns
單位重量:8 mg
SI2301
| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預覽 | 產(chǎn)品購買 |
|---|---|---|---|---|---|---|---|---|---|
| SI2301 | P-Channel Enhancement Mode Field Effect Transistor | MCC[Micro Commercial Components] | 330.46 Kbytes | 共5頁 | 產(chǎn)品購買 | ||||
| SI2301 | P-Channel Enhancement Mode Field Effect Transistor | MCC[Micro Commercial Components] | 242.42 Kbytes | 共5頁 | 產(chǎn)品購買 | ||||
| SI2301 | High dense cell design for extremely low RDS(ON) | MAKOSEMI[MAKO SEMICONDUCTOR CO.,LIMITED] | 109.86 Kbytes | 共3頁 | 產(chǎn)品購買 | ||||
| SI2301 | P- CHANNEL MOSFET in a SOT-23 Plastic Package | FOSHAN[Foshan Blue Rocket Electronics Co.,Ltd.] | 728.09 Kbytes | 共6頁 | 產(chǎn)品購買 | ||||
| SI2301_11 | P-Channel Enhancement Mode Field Effect Transistor | MCC[Micro Commercial Components] | 330.46 Kbytes | 共5頁 | 產(chǎn)品購買 | ||||
| SI2301_17 | P-Channel Enhancement Mode Field Effect Transistor | MCC[Micro Commercial Components] | 267.82 Kbytes | 共5頁 | 產(chǎn)品購買 | ||||
| SI2301-3A | MOSFET SOT-23 P Channel 20V | MDD | ![]() | 1.21 Mbytes | 共13頁 | 產(chǎn)品購買 | |||
| SI2301A | P-Channel Enhancement Mode Field Effect Transistor | MCC[Micro Commercial Components] | 285.47 Kbytes | 共5頁 | 產(chǎn)品購買 | ||||
| Si2301ADS | Triple-Supply Power Management IC for Powering FPGAs and DSPs | TI[Texas Instruments] | 1312.98 Kbytes | 共29頁 | 產(chǎn)品購買 | ||||
| SI2301ADS | P-Channel 2.5-V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 39.9 Kbytes | 共4頁 | SI6433BDQ,SI5443DC,SI1039X,SI4493DY,SI5903DC,SI6562DQ,SI4562DY,SI1303DL,SI1903DL,SI4463BDY | 產(chǎn)品購買 | |||
| SI2301ADS-T1 | VBsemi(臺灣微碧) | 893.4 Kbytes | 共9頁 | 產(chǎn)品購買 | |||||
| SI2301ADS-T1-GE3 | P-Channel 20-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | 1035.17 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2301A-TP | 連續(xù)漏極電流(Id)(25°C 時):2.8A 漏源電壓(Vdss):-20V 柵源極閾值電壓:900mV @ 250uA 漏源導通電阻:120mΩ @ 2.8A,4.5V 最大功率耗散(Ta=25°C):1.25W 類型:P溝道 | MCC(美微科) | 333.39 Kbytes | 共5頁 | 產(chǎn)品購買 | ||||
| SI2301B | 連續(xù)漏極電流(Id)(25°C 時):2.5A(Tj) 漏源電壓(Vdss):-20V 柵源極閾值電壓:1V @ 250uA 漏源導通電阻:120mΩ @ 2.8A,4.5V 最大功率耗散(Ta=25°C):350mW 類型:P溝道 | UMW(友臺半導體) | ![]() | 1.27 Mbytes | 共2頁 | 產(chǎn)品購買 | |||
| SI2301BD | P-Channel 2.5-V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 59.87 Kbytes | 共5頁 | SI5443DC,SI1039X,SI5903DC,SI2301ADS,SI4493DY,SI1303DL,SI1903DL,SI6562DQ,SI4562DY,SI4463BDY | 產(chǎn)品購買 | |||
| SI2301BDS | P-Channel 2.5-V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 59.87 Kbytes | 共5頁 | SI5443DC,SI1039X,SI5903DC,SI2301ADS,SI4493DY,SI1303DL,SI1903DL,SI6562DQ,SI4562DY,SI4463BDY | 產(chǎn)品購買 | |||
| SI2301BDS | P-Channel 2.5 V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 213.22 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2301BDS | P-Channel 2.5-V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 93.77 Kbytes | 共6頁 | SI9933BDY,SI9934DY,SI4963BDY_07,SI3445DV,SI9925DY,SI6467DQ,SI1469DH,FDMA291P,NTGD4161P_06,NTLTS3107P_05 | 產(chǎn)品購買 | |||
| SI2301BDS | P-Channel 2.5 V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 213.22 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2301BDS_08 | P-Channel 2.5-V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 93.77 Kbytes | 共6頁 | SI9933BDY,SI9934DY,SI4963BDY_07,SI3445DV,SI9925DY,SI6467DQ,SI1469DH,FDMA291P,NTGD4161P_06,NTLTS3107P_05 | 產(chǎn)品購買 | |||
| SI2301BDS-T1 | P-Channel 2.5-V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 59.87 Kbytes | 共5頁 | SI5443DC,SI1039X,SI5903DC,SI2301ADS,SI4493DY,SI1303DL,SI1903DL,SI6562DQ,SI4562DY,SI4463BDY | 產(chǎn)品購買 | |||
| SI2301BDS-T1-E3 | P-Channel 2.5 V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 213.22 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2301BDS-T1-GE3 | P-Channel 2.5 V (G-S) MOSFET | VISHAY[Vishay Siliconix] | 213.22 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2301BDS-T1-GE3 | P-Channel 20-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | 1035.15 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2301CDS | P-Channel 20-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 103.45 Kbytes | 共6頁 | SI5945DU,SI1913EDH_08,SI7601DN,SI1067X,SI7703EDN,SI6983DQ,SI1069X,SI1967DH,SIA811DJ,SI2351DS | 產(chǎn)品購買 | |||
| SI2301CDS | Halogen-free Option Available TrenchFET?? Power MOSFET | TYSEMI[TY Semiconductor Co., Ltd] | 151.57 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| Si2301CDS | P-Channel 20 V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 203.38 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2301CDS_17 | P-Channel 20 V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 203.38 Kbytes | 共9頁 | 產(chǎn)品購買 | ||||
| SI2301CDS-T1 | VBsemi(臺灣微碧) | 892.96 Kbytes | 共9頁 | 產(chǎn)品購買 | |||||
| SI2301CDS-T1-E3 | P-Channel 20-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | 103.45 Kbytes | 共6頁 | SI5945DU,SI1913EDH_08,SI7601DN,SI1067X,SI7703EDN,SI6983DQ,SI1069X,SI1967DH,SIA811DJ,SI2351DS | 產(chǎn)品購買 |
關(guān)注官方微信

天天IC網(wǎng)由深圳市四方好訊科技有限公司獨家運營
天天IC網(wǎng) ( www.meandmyfour.com ) 版權(quán)所有?2014-2025 粵ICP備15059004號