Channel TypeN
Collector Current444 A
Collector to Emitter Shorted Voltage1700 V
Collector to Emitter Voltage1700 V
ConfigurationArray
Continuous Collector Current444 A
Energy Rating340 mJ
Gate Capacitance26.4 nF
Height0.669" (17mm)
Maximum Operating Temperature+150 °C
Mounting TypeScrew
Package TypeSEMIX 33c
PolarityN-Channel
Primary TypeSi
Product HeaderTrench N-Channel IGBT Module
Resistance, Thermal, Junction to Case0.071 K/W
SeriesIGBT Series
Temperature Operating Range-55 to +150 °C
Transistor TypeIGBT
TypeTrench
Voltage, Saturation, Collector to Emitter1.7 V @ 25°C (Typ.)
Width6.417" (163mm)