������:ROHM Semiconductor
�a(ch��n)Ʒ�N�:��늾��w��
RoHS:��
���b�L(f��ng)��:Through Hole
��ֵ���L(zh��ng):800 nm
�����Դ늉�:5 V
�_����B(t��i)��늘O������:30 mA
��늘O���l(f��)��O���늉� VCEO:32 V
�����:500 nA
�����r(sh��)�g:10 us
�½��r(sh��)�g:10 us
Pd-���ʺ�ɢ:150 mW
��С�����ض�:- 25 C
������ض�:+ 85 C
ϵ��:RPT-37PB3F
�߶�:5.2 mm
�L(zh��ng)��:3.8 mm
���b:Bulk
���:Phototransistor
����:3.8 mm
�̘�(bi��o):ROHM Semiconductor
�돊(qi��ng)�ȽǶ�:36 deg
�a(ch��n)Ʒ���:Phototransistors
���S���b��(sh��)��:2000
��e:Optical Detectors and Sensors
���̖(h��o)�e��:RPT-37PB3F