| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
| PMV213SN | N-channel enhancement mode field-effect transistor | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/975TYSEMI.GIF) | 149.93 Kbytes | 共2頁 |  | |
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| PMV213SN | UTrenchMOS standard level FET | PHILIPS[NXP Semiconductors] | ![PHILIPS[NXP Semiconductors]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/117PHILIPS.GIF) | 97.54 Kbytes | 共12頁 |  | PMF780SN,BUK7510-30,BUK7575-55,PHB45N03T,BUK7506-75B,PMV30UN,BUK7511-55A,PHP225NQ04T,BUK7880-55A |
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產(chǎn)品購買
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| PMV213SN | N-Channel 100 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1939.59 Kbytes | 共9頁 |  | |
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| PMV213SN,215 | MOSFET TAPE13 PWR-MOS | Nexperia |  | 259.27 Kbytes | 共14頁 |  | |
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| PMV213SN,215 | MOSFET N-CH 100V 1.9A TO236AB | Nexperia USA Inc. |  | 258.80 Kbytes | 共14頁 |  | |
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| PMV213SN,215 | 連續(xù)漏極電流(Id)(25°C 時):1.9A 漏源電壓(Vdss):100V 柵源極閾值電壓:4V @ 1mA 漏源導(dǎo)通電阻:250mΩ @ 500mA,10V 最大功率耗散(Ta=25°C):280mW 類型:N溝道 | Nexperia(安世) |  | 345.58 Kbytes | 共13頁 |  | |
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