Series*
PackageBulk
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-
MGP7N60E
| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|---|---|---|
| MGP7N60E | Insulated Gate Bipolar Transistor | MOTOROLA[Motorola, Inc] | 122.09 Kbytes | 共6頁(yè) | MGV12N120D,NTE3301,MGP4N60ED,BUK866-400IZ,IRG4PC30KD,IRG4PC50KD,IRGB420UD2,IRGPH50MD2,GT15J121,IRG4IBC30KD | 產(chǎn)品購(gòu)買(mǎi) | |||
| MGP7N60E | Insulated Gate Bipolar Transistor | ONSEMI[ON Semiconductor] | 118.14 Kbytes | 共5頁(yè) | MGS13002D,NTE3300,MGP4N60E,BUK866-400IZ,IRG4PC30KD,IRG4PC50KD,IRGB420UD2,IRGPH50MD2,GT15J121,IRG4IBC30KD | 產(chǎn)品購(gòu)買(mǎi) | |||
| MGP7N60ED | Insulated Gate Bipolar Transistor withr Anti-Parallel Diode | ONSEMI[ON Semiconductor] | 144.18 Kbytes | 共6頁(yè) | MGV12N120D,MGW12N120D,MGW20N60D,MGY20N120D,MGY25N120D,MGY30N60D,MGY40N60D,MGP4N60ED,MGW12N120D,MGY20N120D | 產(chǎn)品購(gòu)買(mǎi) |
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