| 型號(hào) | 功能描述 | 生產(chǎn)廠(chǎng)商 | 廠(chǎng)商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買(mǎi) |
| ME230 | Preset counters mechanic | IVO[Baumer IVO GmbH & Co. KG] | ![IVO[Baumer IVO GmbH & Co. KG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/549IVO.GIF) | 330.45 Kbytes | 共2頁(yè) |  | ME102,FE504,FS218,FS304,FS309,SN54LV404A,H7EC,CD54HC40103_07,CD54HCT161_08,SN54HC4020_08 |
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| ME2301 | 連續(xù)漏極電流(Id)(25°C 時(shí)):2.7A 漏源電壓(Vdss):-20V 柵源極閾值電壓:1V @ 250uA 漏源導(dǎo)通電阻:110mΩ @ 2.8A,4.5V 最大功率耗散(Ta=25°C):1.3W 類(lèi)型:P溝道 | MATSUKI(松木) |  | 1.10 Mbytes | 共5頁(yè) |  | |
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| ME2302 | 連續(xù)漏極電流(Id)(25°C 時(shí)):2.8A 漏源電壓(Vdss):20V 柵源極閾值電壓:1.2V @ 250uA 漏源導(dǎo)通電阻:85mΩ @ 2.8A,4.5V 最大功率耗散(Ta=25°C):1.25W 類(lèi)型:N溝道 | MATSUKI(松木) |  | 587.80 Kbytes | 共5頁(yè) |  | |
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| ME2302A29T | High-density cell design for ultra low on-resistance | SUNMATE[SUNMATE electronic Co., LTD] | ![SUNMATE[SUNMATE electronic Co., LTD]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1013SUNMATE.GIF) | 472.13 Kbytes | 共4頁(yè) |  | |
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| ME2303 | Super high density cell design for extremely low RDS(ON) | SUNMATE[SUNMATE electronic Co., LTD] | ![SUNMATE[SUNMATE electronic Co., LTD]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1013SUNMATE.GIF) | 1182.63 Kbytes | 共5頁(yè) |  | |
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| ME2304 | N-Channel 30-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1867.41 Kbytes | 共9頁(yè) |  | |
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| ME2306A | N-Channel 30-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1026.06 Kbytes | 共9頁(yè) |  | |
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| ME2306D | 連續(xù)漏極電流(Id)(25°C 時(shí)):5.3A 漏源電壓(Vdss):30V 柵源極閾值電壓:3V @ 250uA 漏源導(dǎo)通電阻:31mΩ @ 6.7A,10V 最大功率耗散(Ta=25°C):1.39W 類(lèi)型:N溝道 | MATSUKI(松木) |  | 1.43 Mbytes | 共5頁(yè) |  | |
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| ME2307 | 連續(xù)漏極電流(Id)(25°C 時(shí)):3.5A 漏源電壓(Vdss):-20V 柵源極閾值電壓:3V @ 250uA 漏源導(dǎo)通電阻:70mΩ @ 3.2A,10V 最大功率耗散(Ta=25°C):1.4W 類(lèi)型:P溝道 | MATSUKI(松木) |  | 1.21 Mbytes | 共5頁(yè) |  | |
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| ME2308S | N-Channel 30-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1025.92 Kbytes | 共9頁(yè) |  | |
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| ME2308S-G | | MATSUKI(松木) |  | 1.20 Mbytes | 共5頁(yè) |  | |
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| ME2309-G | | MATSUKI(松木) |  | 1.56 Mbytes | 共5頁(yè) |  | |
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