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RoHS:��
���g(sh��):Si
���b�L(f��ng)��:Chassis Mount
���b / ���w:ISOPLUS-227-4
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���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:500 V
Id-�B�m(x��)©�O���:72 A
Rds On-©Դ��(d��o)ͨ���:55 mOhms
Vgs - �ŘO-Դ�O늉�:20 V
��С�����ض�:- 40 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:580 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:HyperFET
���b:Tube
�߶�:9.65 mm
�L��:38.23 mm
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���w�����:1 N-Channel
����:25.42 mm
�̘�(bi��o):IXYS
�½��r(sh��)�g:27 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:70 ns
���S���b��(sh��)��:10
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:102 ns
���ͽ�ͨ���t�r(sh��)�g:61 ns