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IRG4BC30KD-S
規(guī)格信息：

封裝/外殼：D2PAKCOPAK

Packing Type：TUBE

Moisture Level：1

td(off)：160.0ns

tf：80.0ns

Technology：IGBT Gen 4

Irrm：3.5A

Eoff：0.58mJ

tr：42.0ns

Package：D2PAK (TO-263)

Budgetary Price ?€/1k：1.38

ICpuls max：56.0A

Ptot max：100.0W

IC (@ 25°) max：28.0A

td(on)：60.0ns

Switching Frequency min max：8.0kHz 30.0kHz

IF max：58.0A

Switching Frequency：Gen 4 8-30 kHz

QGate：67.0nC

Voltage Class max：600.0V

Ets (max)：1.18mJ (1.6mJ)

Eon：0.6mJ

VF：1.4V

VCE(sat)：2.21V

IC (@ 100°) max：16.0A

Qrr：80.0nC

無(wú)鉛情況/RoHs：無(wú)鉛/符合RoHs

IRG4BC30KD-S

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	相關(guān)型號(hào)	產(chǎn)品購(gòu)買
IRG4BC30KD-S	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)	IRF[International Rectifier]	225.23 Kbytes	共10頁(yè)	IRG4PC40UD,IRG4BC30KD,IRG4PC30KD,IRGBC30MD2-S,IRG4BC20MDS,IRG4PC30UD,IRG4PC50UD,IRG4PSC71KD,IRG4IBC30KD,IRG4BC10KD	產(chǎn)品購(gòu)買
IRG4BC30KD-SPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE	IRF[International Rectifier]	376.96 Kbytes	共11頁(yè)		產(chǎn)品購(gòu)買
IRG4BC30KD-SPBF	INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	IRF[International Rectifier]	350.48 Kbytes	共10頁(yè)	IRG4PC50UDPBF,IRGP4063DPBF,IRG4BC10SDPBF,IRG4BC15UD-SPBF,IRG4BC20SD-SPBF,HFA140NH60,DSEP2X31-03A,DSEP8-06B,DSEP2X91-06A,HFA25TB60S	產(chǎn)品購(gòu)買
IRG4BC30KD-SPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE	IRF[International Rectifier]	376.96 Kbytes	共11頁(yè)		產(chǎn)品購(gòu)買
IRG4BC30KD-STRR	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)	IRF[International Rectifier]	225.23 Kbytes	共10頁(yè)	IRG4PC40UD,IRG4BC30KD,IRG4PC30KD,IRGBC30MD2-S,IRG4BC20MDS,IRG4PC30UD,IRG4PC50UD,IRG4PSC71KD,IRG4IBC30KD,IRG4BC10KD	產(chǎn)品購(gòu)買