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SeriesHEXFET?

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)250 V

Current - Continuous Drain (Id) @ 25°C13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs-

Vgs(th) (Max) @ Id-

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)-

Input Capacitance (Ciss) (Max) @ Vds-

FET Feature-

Power Dissipation (Max)125W

Operating Temperature-

Mounting TypeThrough Hole

Supplier Device PackageTO-204AE

Package / CaseTO-204AE