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HGTP12N60C3D
規(guī)格信息：

制造商:ON Semiconductor

產(chǎn)品種類:IGBT 晶體管

RoHS:是

技術(shù):Si

封裝 / 箱體:TO-220-3

安裝風(fēng)格:Through Hole

配置:Single

集電極—發(fā)射極最大電壓 VCEO:600 V

集電極—射極飽和電壓:1.65 V

柵極/發(fā)射極最大電壓:20 V

在25 C的連續(xù)集電極電流:24 A

Pd-功率耗散:104 W

最小工作溫度:- 40 C

最大工作溫度:+ 150 C

系列:HGTP12N60C3D

封裝:Tube

集電極最大連續(xù)電流 Ic:24 A

高度:9.4 mm

長(zhǎng)度:10.67 mm

寬度:4.83 mm

商標(biāo):ON Semiconductor / Fairchild

集電極連續(xù)電流:24 A

柵極—射極漏泄電流:+/- 100 nA

產(chǎn)品類型:IGBT Transistors

工廠包裝數(shù)量:800

子類別:IGBTs

零件號(hào)別名:HGTP12N60C3D_NL

單位重量:1.800 g

HGTP12N60C3D

型號(hào)	功能描述	生產(chǎn)廠商	廠商LOGO	PDF大小	PDF頁(yè)數(shù)	PDF文件	相關(guān)型號(hào)	第一頁(yè)預(yù)覽	產(chǎn)品購(gòu)買
HGTP12N60C3D	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	FAIRCHILD[Fairchild Semiconductor]		154.92 Kbytes	共8頁(yè)		HGTP12N60C3D,HGTG12N60C3D,HGTP7N60C3D,HGTP3N60C3D,HGTG12N60C3D,HGT1Y40N60B3D,HGTP7N60C3D,HGTG30N60C3D,HGTG12N60C3D,HGTG30N60C3D		產(chǎn)品購(gòu)買
HGTP12N60C3D	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	INTERSIL[Intersil Corporation]		99.41 Kbytes	共7頁(yè)		HGTP12N60C3D,HGTG12N60C3D,HGTP7N60C3D,HGTP3N60C3D,HGTG12N60C3D,HGT1Y40N60B3D,HGTP7N60C3D,HGTG30N60C3D,HGTG30N60C3D,HGTG12N60C3D		產(chǎn)品購(gòu)買