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FQB33N10 PDF文件_規(guī)格信息

FQB33N10
規(guī)格信息：

制造商:Fairchild Semiconductor

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:33 A

Vds-漏源極擊穿電壓:100 V

Rds On-漏源導通電阻:52 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :25 V

最大工作溫度:+ 175 C

Pd-功率耗散:3.75 W

安裝風格:SMD/SMT

封裝 / 箱體:D2PAK-3

商標:Fairchild Semiconductor

通道模式:Enhancement

配置:Single

最小工作溫度:- 55 C

上升時間:195 ns

系列:FQB33N10

典型關(guān)閉延遲時間:80 ns

典型接通延遲時間:15 ns

FQB33N10

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
FQB33N10	100V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	585.35 Kbytes	共9頁	STL35NF10,ZXMN10A08E6,FDS3612,FQA70N10,FQB55N10,FQP13N10,FQPF13N10,FQT7N10L,2N6796	產(chǎn)品購買
FQB33N10	100V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	592.68 Kbytes	共10頁	FDMS3672,STB80NF10,IRF540_03,FDD3670_01,ZXMN10A08G,FDM3622_07,FDS3670_0011,ZXMN10A07Z_04,STD10NF10,FDS3680_0011	產(chǎn)品購買
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