������:ON Semiconductor
�a(ch��n)Ʒ�N�(l��i):�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���b�L(f��ng)��:Through Hole
���b / ���w:TO-126-3
���w�ܘO��:NPN
����:Single
��늘O���l(f��)��O���늉� VCEO:80 V
��늘O�����O늉� VCBO:80 V
�l(f��)��O - ���O늉� VEBO:5 V
��늘O����O�늉�:0.5 V
���ֱ��늼�늘O���:1.5 A
��С�����ض�:- 55 C
������ض�:+ 150 C
ϵ��:BD139
ֱ��������� hFE ���ֵ:250
�߶�:1.5 mm
�L(zh��ng)��:8 mm
���b:Tube
����:3.25 mm
�̘�(bi��o):ON Semiconductor / Fairchild
��늘O�B�m(x��)���:1.5 A
ֱ����늘O/Base Gain hfe Min:40
Pd-���ʺ�ɢ:12.5 W
�a(ch��n)Ʒ�(l��i)��:BJTs - Bipolar Transistors
���S���b��(sh��)��:1920
���(l��i)�e:Transistors
���̖(h��o)�e��:BD13916STU_NL
�����:761 mg