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SeriesPOWER MOS 8?

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)1000 V

Current - Continuous Drain (Id) @ 25°C18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs700mOhm @ 9A, 10V

Vgs(th) (Max) @ Id5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds4845 pF @ 25 V

FET Feature-

Power Dissipation (Max)625W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageD3PAK

Package / CaseTO-268-3, D3Pak (2 Leads + Tab), TO-268AA