Current - Continuous Drain (Id) @ 25° C:30A
Drain to Source Voltage (Vdss):1000V (1kV)
FET Feature:Standard
FET Type:MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs:267nC @ 10V
Input Capacitance (Ciss) @ Vds:7114pF @ 25V
Mounting Type:Chassis Mount
Package / Case:SOT-227-4, miniBLOC
Power - Max:595W
Rds On (Max) @ Id, Vgs:260 mOhm @ 15A, 10V
Supplier Device Package:ISOTOP?
Vgs(th) (Max) @ Id:5V @ 5mA
包裝:4SOT-227
通道模式:Enhancement
最大漏源電壓:1000 V
最大連續(xù)漏極電流:30 A
RDS -于:280@10V mOhm
最大門源電壓:±30 V
典型導(dǎo)通延遲時(shí)間:17 ns
典型上升時(shí)間:8 ns
典型關(guān)閉延遲時(shí)間:39 ns
典型下降時(shí)間:9 ns
工作溫度:-55 to 150 °C
安裝:Screw
標(biāo)準(zhǔn)包裝:Rail / Tube