������:ON Semiconductor
�a(ch��n)Ʒ�N�:�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���b�L(f��ng)��:Through Hole
���b / ���w:TO-220-3
���w�ܘO��:NPN
����:Single
��늘O���l(f��)��O���늉� VCEO:100 V
��늘O�����O늉� VCBO:100 V
�l(f��)��O - ���O늉� VEBO:5 V
��늘O����O�늉�:1.5 V
���ֱ��늼�늘O���:6 A
���控���a(ch��n)ƷfT:3 MHz
��С�����ض�:- 65 C
������ض�:+ 150 C
ϵ��:BD243C
�߶�:9.28 mm (Max)
�L��:10.28 mm (Max)
���b:Tube
����:4.82 mm (Max)
�̘�(bi��o):ON Semiconductor
��늘O�B�m(x��)���:6 A
ֱ����늘O/Base Gain hfe Min:30
Pd-���ʺ�ɢ:65 W
�a(ch��n)Ʒ���:BJTs - Bipolar Transistors
���S���b��(sh��)��:50
��e:Transistors
�����:6 g