制造商:Central Semiconductor
產(chǎn)品種類:雙極晶體管 - 雙極結(jié)型晶體管(BJT)
RoHS:是
技術(shù):Si
安裝風格:Through Hole
封裝 / 箱體:TO-3-2
晶體管極性:PNP
集電極—發(fā)射極最大電壓 VCEO:140 V
集電極—基極電壓 VCBO:160 V
發(fā)射極 - 基極電壓 VEBO:7 V
集電極—射極飽和電壓:1.4 V
增益帶寬產(chǎn)品fT:4 MHz
最小工作溫度:- 65 C
最大工作溫度:+ 200 C
系列:2N6609
直流電流增益 hFE 最大值:60
封裝:Bulk
商標:Central Semiconductor
集電極連續(xù)電流:16 A
直流集電極/Base Gain hfe Min:5
Pd-功率耗散:150 W
產(chǎn)品類型:BJTs - Bipolar Transistors
工廠包裝數(shù)量:20
子類別:Transistors
零件號別名:2N6609 PBFREE
2N6609
| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
|---|---|---|---|---|---|---|---|---|---|
| 2N6609 | POWER TRANSISTORS(16A,140V,150W) | MOSPEC[Mospec Semiconductor] | 143.29 Kbytes | 共3頁 | STW16NA40,2N6259,BD241BFP,MRF6S9045,TIP620,TIPL752,LET9006,MJD2955,PD55015-PD55015S,SD2903 | 產(chǎn)品購買 | |||
| 2N6609 | COMPLEMENTARY POWER TRANSISTORS | ONSEMI[ON Semiconductor] | 205.47 Kbytes | 共6頁 | MJE15028,MJW21192,TIP35A,NTE131,NTE38,2N6052,MJE4343,TIP3055,BD235,MJ2501 | 產(chǎn)品購買 | |||
| 2N6609 | COMPLEMENTARY SILICON POWER TRANSISTORS | BOCA[Boca Semiconductor Corporation] | 148.97 Kbytes | 共3頁 | MJE15028,MJW21192,TIP35A,NTE38,2N6040,MJ11028,MJE243,TIP29B,2N6487,TIP110 | 產(chǎn)品購買 | |||
| 2N6609 | Complementary Silicon Power Transistors | ONSEMI[ON Semiconductor] | 96.31 Kbytes | 共6頁 | BD433_03,MJD340_03,D44VH,MJE172_03,TIP127FP_03,2N3055,2N6284,2N6036_00,BD439_00 | 產(chǎn)品購買 | |||
| 2N6609 | Complementary Silicon Power Transistors | ONSEMI[ON Semiconductor] | 97.33 Kbytes | 共6頁 | 產(chǎn)品購買 | ||||
| 2N6609 | COMPLEMENTARY SILICON POWER TRANSITORS | CENTRAL[Central Semiconductor Corp] | 84.86 Kbytes | 共1頁 | 產(chǎn)品購買 | ||||
| 2N6609 | isc Silicon PNP Power Transistor | ISC[Inchange Semiconductor Company Limited] | 144.8 Kbytes | 共2頁 | 產(chǎn)品購買 |
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