������:Central Semiconductor
�a(ch��n)Ʒ�N�:�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���b�L(f��ng)��:Through Hole
���b / ���w:TO-3-2
���w�ܘO��:NPN
��늘O���l(f��)��O���늉� VCEO:400 V
��늘O�����O늉� VCBO:850 V
�l(f��)��O - ���O늉� VEBO:9 V
��늘O����O�늉�:5 V
���ֱ��늼�늘O���:8 A
���控���a(ch��n)ƷfT:28 MHz
��С�����ض�:- 65 C
������ض�:+ 200 C
ϵ��:2N6545
���b:Tube
�̘�(bi��o):Central Semiconductor
ֱ����늘O/Base Gain hfe Min:7 at 5 A, 3 V
Pd-���ʺ�ɢ:125 W
�a(ch��n)Ʒ���:BJTs - Bipolar Transistors
���S���b��(sh��)��:20
��e:Transistors
���̖(h��o)�e��:2N6545 PBFREE
�����:6.401 g