������:Central Semiconductor
�a(ch��n)Ʒ�N�:�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:Through Hole
���b / ���w:TO-18-3
���w�ܘO��:PNP
����:Single
��늘O�����O늉� VCBO:80 V
�l(f��)��O - ���O늉� VEBO:4 V
��늘O����O�늉�:0.3 V
���控���a(ch��n)ƷfT:200 MHz
ϵ��:2N3496
���b:Bulk
�̘�(bi��o):Central Semiconductor
ֱ����늘O/Base Gain hfe Min:40 at 10 mA, 10 V
�a(ch��n)Ʒ���:BJTs - Bipolar Transistors
���S���b��(sh��)��:2000
��e:Transistors
���̖(h��o)�e��:2N3496 PBFREE